rev.4.00 sep 07, 2005 page 1 of 7 2sK2725 silicon n channel mos fet high speed power switching rej03g1023-0400 (previous: ade-208-452b) rev.4.00 sep 07, 2005 features ? low on-resistance ? high speed switching ? low drive current ? no secondary breakdown ? avalanche ratings outline renesas package code: prss0003ae-a (package name: to-220c fm) d g s 1. gate 2. drain 3. source 1 2 3
2sK2725 rev.4.00 sep 07, 2005 page 2 of 7 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v drain current i d 5 a drain peak current i d(pulse) * 1 20 a body to drain diode reverse drain current i dr 5 a avalanche current i ap * 3 5 a avalanche energy e ar * 3 1.38 mj channel dissipation pch* 2 30 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ? electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 500 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 25 v, v ds = 0 zero gate voltage drain current i dss ? ? 10 a v ds = 500 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.5 ? 3.5 v i d = 1 ma, v ds = 10 v* 4 static drain to source on state resistance r ds(on) ? 1.2 1.6 ? i d = 3 a, v gs = 10 v* 4 forward transfer admittance |y fs | 2.5 4.5 ? s i d = 3 a, v ds = 10 v* 4 input capacitance ciss ? 630 ? pf output capacitance coss ? 250 ? pf reverse transfer capacitance crss ? 55 ? pf v ds = 10 v, v gs = 0, f = 1mhz total gate charge qg ? 13.5 ? nc gate to source charge qgs ? 3.5 ? nc gate to drain charge qgd ? 5.0 ? nc v dd = 400 v, v gs = 10 v, i d = 5 a turn-on delay time t d(on) ? 11 ? ns rise time t r ? 45 ? ns turn-off delay time t d(off) ? 40 ? ns fall time t f ? 50 ? ns v gs = 10 v, i d = 3 a, r l = 10 ? body to drain diode forward voltage v df ? 0.95 ? v i d = 5 a, v gs = 0 body to drain diode reverse recovery time t rr ? 200 ? ns i f = 5 a, v gs = 0 dif/ dt = 100 a/ s note: 4. pulse test
2sK2725 rev.4.00 sep 07, 2005 page 3 of 7 main characteristics case temperature t c ( c) power vs. temperature derating channel dissipation pch (w) drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) typical output characteristics drain current i d (a) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. drain current 40 30 20 10 0 50 100 150 200 13 10 30 100 300 1000 10 8 6 4 2 0 246810 10 8 6 4 2 0 10 20 30 40 50 100 20 10 5 2 0.5 0.2 0.1 0.05 1 ta = 25 c 10 s 100 s 1 ms pw = 10 ms (1shot) dc operation (tc = 25 c) 4 v v gs = 3.5 v 6 v 8 v 5.5 v 5 v 4.5 v 10 v tc = 75 c 25 c ?25 c ds operation in this area is limited by r ds(on) pulse test v ds = 10 v pulse test 20 16 12 8 4 0 48 12 16 20 0.1 1 10 0.2 5 10 2 5 1 0.5 2 0.5 i d = 5 a 1 a 2 a 20 v gs = 10, 15 v pulse test pulse test
2sK2725 rev.4.00 sep 07, 2005 page 4 of 7 case temperature t c ( c) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance ? y fs ? (s) forward transfer admittance vs. drain current reverse recovery time t rr (ns) body to drain diode reverse recovery time reverse drain current i dr (a) drain to source voltage v ds (v) capacitance c (pf) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics gate to source voltage v gs (v) drain current i d (a) switching time t (ns) switching characteristics 5 4 3 2 1 ?40 0 40 80 120 160 0 0.1 0.2 0.5 12 5 10 10 5 1 2 0.2 0.5 0.1 i d = 5 a v gs = 10 v 1 a 2 a 25 c tc = ?25 c 75 c pulse test v ds = 10 v pulse test 0.1 0.3 1 3 10 30 100 01020304050 50 2000 1000 100 200 500 500 400 300 200 100 0 20 16 12 8 4 8 16243240 0 300 30 100 1000 3 10 1 0.1 0.2 1 2 10 1000 500 100 200 20 50 10 di / dt = 100 a / s v gs = 0, ta = 25 c 10 20 5 2 v gs = 0 f = 1 mhz ciss coss crss 5 0.5 v gs = 30 v, v dd = 30 v pw = 10 s, duty < 1 % t f t r t d(on) t d(off) i d = 5 a v gs v ds v dd = 100 v 250 v 400 v v dd = 400 v 250 v 100 v
2sK2725 rev.4.00 sep 07, 2005 page 5 of 7 10 8 6 4 2 0 0.4 0.8 1.2 1.6 2.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 0 i ap = 5 a v dd = 50 v duty < 1 % rg > 50 ? channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test v gs = 0, ?5 v 5, 10 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 4.17 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width d. u. t rg i ap monitor v ds monitor v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l i ap 2 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform
2sK2725 rev.4.00 sep 07, 2005 page 6 of 7 vin monitor d.u.t. vin 10 v r l v dd = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 50 ? 90% 10% t f switching time test circuit switching time waveforms
2sK2725 rev.4.00 sep 07, 2005 page 7 of 7 package dimensions 10.0 0.3 3.2 0.2 12.0 0.3 2.7 0.2 15.0 0.3 13.6 1.0 0.7 0.1 2.5 0.2 4.5 0.3 2.54 2.54 1.0 0.2 1.15 0.2 0.6 0.1 4.1 0.3 package name prss0003ae-a to-220cfm / to-220cfmv mass[typ.] 1.9g ? renesas code jeita package code unit: mm ordering information part name quantity shipping container 2sK2725-e 600 pcs box (tube) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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